SI2342DS features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? low on-resistance ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switches for low voltage gate drive ? low voltage operating circuits - gate drive 1.2 v to 5 v notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 166 c/w. e. package limited. product summary v ds (v) r ds(on) ( ? ) i d (a) a, e q g (typ.) 8 0.017 at v gs = 4.5 v 6 6 nc 0.020 at v gs = 2.5 v 6 0.022 at v gs = 1.8 v 6 0.030 at v gs = 1.5 v 6 0.075 at v gs = 1.2 v 6 marking code f2 xxx lot tracea b ility and date code part # code orderin g information: SI2342DS-t1-ge3 (lead (p b )-free and halogen-free) g s d top v ie w 2 3 sot-23 1 n -channel mosfet g d s (3) (2) (1) absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d 6 e a t c = 70 c 6 e t a = 25 c 6 e, b, c t a = 70 c 5.8 b, c pulsed drain current (t = 300 s) i dm 30 continuous source-drain diode current t c = 25 c i s 2.1 t a = 25 c 1.1 b, c maximum power dissipation t c = 25 c p d 2.5 w t c = 70 c 1.6 t a = 25 c 1.3 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t ? 5 s r thja 75 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 50 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com vishay siliconix SI2342DS document number: 63302 s11-1388-rev. a, 11-jul-11 www.vishay.com 1 new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 8 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? low on-resistance ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switches for low voltage gate drive ? low voltage operating circuits - gate drive 1.2 v to 5 v notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady state conditions is 166 c/w. e. package limited. product summary v ds (v) r ds(on) ( : ) i d (a) a, e q g (typ.) 8 0.017 at v gs = 4.5 v 6 6 nc 0.020 at v gs = 2.5 v 6 0.022 at v gs = 1.8 v 6 0.030 at v gs = 1.5 v 6 0.075 at v gs = 1.2 v 6 marking code f2 xxx lot tracea b ility and date code part # code orderin g information: SI2342DS-t1-ge3 (lead (p b )-free and halogen-free) g s d top v ie w 2 3 sot-23 1 n -channel mosfet g d s (3) (2) (1) absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d 6 e a t c = 70 c 6 e t a = 25 c 6 e, b, c t a = 70 c 5.8 b, c pulsed drain current (t = 300 s) i dm 30 continuous source-drain diode current t c = 25 c i s 2.1 t a = 25 c 1.1 b, c maximum power dissipation t c = 25 c p d 2.5 w t c = 70 c 1.6 t a = 25 c 1.3 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t d 5 s r thja 75 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 50
notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 8v v ds temperature coefficient ? v ds /t j i d = 250 a 10 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.35 0.8 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 100 na zero gate voltage drain current i dss v ds = 8 v, v gs = 0 v 1 a v ds = 8 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 4.5 v 20 a drain-source on-state resistance a r ds(on) v gs ?? 4.5 v, i d = 7.2 a 0.014 0.017 ? v gs ?? 2.5 v, i d = 6.7 a 0.016 0.020 v gs = 1.8 v, i d = 6.4 a 0.018 0.022 v gs = 1.5 v, i d = 5.5 a 0.020 0.030 v gs = 1.2 v, i d = 1.3 a 0.025 0.075 forward transconductance a g fs v ds = 4 v, i d = 7.2 a 75 s dynamic b input capacitance c iss v ds = 4 v, v gs = 0 v, f = 1 mhz 1070 pf output capacitance c oss 385 reverse transfer capacitance c rss 200 total gate charge q g v ds = 4 v, v gs = 4.5 v, i d = 7.2 a 10.5 15.8 nc v ds = 4 v, v gs = 2.5 v, i d = 7.2 a 69 gate-source charge q gs 1.6 gate-drain charge q gd 1 gate resistance r g f = 1 mhz 2.4 12 24 ? tu r n - o n d e l ay t i m e t d(on) v dd = 4 v, r l = 0.7 ? i d ? 5.8 a, v gen = 4.5 v, r g = 1 ? 612 ns rise time t r 14 20 turn-off delay time t d(off) 65 98 fall time t f 25 38 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 2.1 a pulse diode forward current i sm 30 body diode voltage v sd i s = 5.8 a, v gs ?? 0 0.82 1.2 v body diode reverse recovery time t rr i f = 5.8 a, di/dt = 100 a/s, t j = 25 c 40 60 ns body diode reverse recovery charge q rr 17 26 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 25 SI2342DS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.vishay.com 2 document number: 63302 s11-1388-rev. a, 11-jul-11 vishay siliconix SI2342DS new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 8v v ds temperature coefficient ' v ds /t j i d = 250 a 10 mv/c v gs(th) temperature coefficient ' v gs(th) /t j - 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.35 0.8 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 100 na zero gate voltage drain current i dss v ds = 8 v, v gs = 0 v 1 a v ds = 8 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds d 5 v, v gs = 4.5 v 20 a drain-source on-state resistance a r ds(on) v gs 4.5 v, i d = 7.2 a 0.014 0.017 : v gs 2.5 v, i d = 6.7 a 0.016 0.020 v gs = 1.8 v, i d = 6.4 a 0.018 0.022 v gs = 1.5 v, i d = 5.5 a 0.020 0.030 v gs = 1.2 v, i d = 1.3 a 0.025 0.075 forward transconductance a g fs v ds = 4 v, i d = 7.2 a 75 s dynamic b input capacitance c iss v ds = 4 v, v gs = 0 v, f = 1 mhz 1070 pf output capacitance c oss 385 reverse transfer capacitance c rss 200 total gate charge q g v ds = 4 v, v gs = 4.5 v, i d = 7.2 a 10.5 15.8 nc v ds = 4 v, v gs = 2.5 v, i d = 7.2 a 69 gate-source charge q gs 1.6 gate-drain charge q gd 1 gate resistance r g f = 1 mhz 2.4 12 24 : tu r n - o n d e l ay t i m e t d(on) v dd = 4 v, r l = 0.7 : i d # 5.8 a, v gen = 4.5 v, r g = 1 : 612 ns rise time t r 14 20 turn-off delay time t d(off) 65 98 fall time t f 25 38 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 2.1 a pulse diode forward current i sm 30 body diode voltage v sd i s = 5.8 a, v gs 0 0.82 1.2 v body diode reverse recovery time t rr i f = 5.8 a, di/dt = 100 a/s, t j = 25 c 40 60 ns body diode reverse recovery charge q rr 17 26 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 25
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